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系列: TPSMB 不对称

DO-214AA中的AEC-Q101合格非对称瞬态抑制
产品状态| 有源i
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The TPSMB Asymmetrical TVS Diodes are protect automotive SiC MOSFET gate driver (TPSMBxx05CA) from overvoltage events and can also be used for 12V system reverse battery protection (TPSMBxx12CA, TPSMBxx16CA and TPSMBxx18CA). These devices feature asymmetrical reverse standoff voltages, enabling protection against both positive and negative transients with distinct clamping characteristics-all within a single component. This makes them an ideal solution for robust protection in automotive electronic systems.
  • Single SMB package device providing asymmetrical clamping for positive and negative transient voltages
  • High-reliability application andautomotive grade AEC-Q101qualified
  • 600 W PPPM peak pulse powercapability at 10/1000 μswaveform, repetition rate (dutycycles):0.01 %
  • Surface mount component tooptimize board space
  • 小尺寸封装
  • ESD protection of data lines inaccordance with IEC 61000-4-2, 30 kV(Air), 30 kV (Contact)
  • 出色的箝位能力
  • 增量浪涌电阻低
  • Fast response time: typically less than 1.0 ns from 0 V to VBR min
  • UL认可的化合物符合易燃额定值V-0

TPSMB非对称产品

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TPSMB 不对称 应用

亮点部分

  • TPSMBxx05:
    - Gate driver protection of SiC MOSFET
    - On-board charger (OBC)-
    Traction inverters
  • TPSMBxx12CA/ TPSMBxx16CA/ TPSMBxx18CA:
    - Domain controller
    -Zonal controller
    -Infotainment- Car lighting

系列: TPSMB 非对称资源

TPSMB Asymmetrical (TPSMBxx05)
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TPSMB Asymmetrical (TPSMBxx05)

碳化硅MOSFET具有更快的切换速度,正在彻底改变车载充电器和牵引逆变器等电动汽车电源系统。但是,随着速度加快,过压的风险也随之而来,从而导致潜在的栅极驱动器故障。TPSMB非对称瞬态抑制二极管系列提供了理想的解决方案,提供可靠的单组件保护,保护碳化硅MOSFET栅极驱动器免受过电压事件的影响。了解更多。